PART |
Description |
Maker |
EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM 300MHz 2.8V 4M x 32 DDR SDRAM 333MHz 2.8V 4M x 32 DDR SDRAM 350MHz 2.8V 4M x 32 DDR SDRAM 4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.] Etron Technology Inc. ETRON[Etron Technology Inc.]
|
EBD52UC8AKDA-7B EBD52UC8AKDA EBD52UC8AKDA-6B EBD52 |
512MB DDR SDRAM SO DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
M312L6523BTS-CAA M312L2923BTS-A2 M312L2923BTS-CAA |
64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 64M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 26615150 DDR SDRAM的注册模 DDR SDRAM Registered Module
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYMD564646AL8-H HYMD564646AL8-K HYMD564646A8-H HYM |
Unbuffered DDR SDRAM DIMM 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
HY5TQ1G431ZNFP-H8 HY5TQ1G431ZNFP-H7 HY5TQ1G431ZNFP |
256M X 4 DDR DRAM, 0.255 ns, PBGA82 FBGA-82 256M X 4 DDR DRAM, 0.225 ns, PBGA82 FBGA-82 64M X 16 DDR DRAM, 0.3 ns, PBGA100 64M X 16 DDR DRAM, 0.255 ns, PBGA100
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
HY5DV641622AT-5 |
64M(4Mx16) DDR SDRAM 4M X 16 DDR DRAM, 0.5 ns, PDSO66
|
Hynix Semiconductor, Inc.
|
EDD2504AKTA-7B EDD2504AKTA-6B |
256M bits DDR SDRAM (64M words x 4 bits)
|
Elpida Memory, Inc.
|
EDD2504AKTA-7B EDD2504AKTA EDD2504AKTA-6B EDD2504A |
256M bits DDR SDRAM (64M words x 4 bits)
|
ELPIDA[Elpida Memory]
|
HY5PS56821LF-C4 HY5PS56821LF-C5 HY5PS56821LF-E3 HY |
256Mb DDR2 SDRAM 64M X 4 DDR DRAM, PBGA60 16M X 16 DDR DRAM, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
W1D128M72R8B-5AP-PB1 W1D128M72R8B-5AL-PB1 W1D128M7 |
128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 MO-237, DIMM-240 256M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.6 ns, DMA240 64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
|
Xilinx, Inc. XILINX INC
|
HY5DU56162 HY5DU561622CT |
256M-P DDR SDRAM
|
HYNIX
|